As a PhD candidate in R&D CMOS Integration , you will conduct advanced research on the development and optimization of ferroelectric HfO₂-based devices for next‑generation memory and AI applications.
Core Research Topics
Ferroelectric HfO₂ Devices (FeFET / FeCAP)
Optimization of HfO₂ thin films for stable ferroelectric behavior and investigation of polarization switching, retention, endurance, and variability.
Device-level physics analysis of ferroeletricity based CMOS embedded devices and in-memory computing applications.
Exploration of integration schemes into advanced FDSOI (FDX®) and bulk CMOS technologies.
Advanced Characterization & Materials Analysis
Structural and electrical analysis using: TEM / STEM (including advanced contrast techniques such as DPC) / SEM and nanoscale imaging tools
Electrical device and simple circuit characterization and mapping the results to structural data.
Required Qualifications
Master’s / Diplom degree in Materials Science, Physics, Electrical Engineering, or a related discipline
Strong expertise in semiconductor materials analysis and nanostructure characterization.
Hands-on experience with TEM / STEM /SEM characterization FIB preperation and analysis are beneficial.
Experience in data analysis using Python
Background in semiconductor device physics (e.g., MOSFETs, ferroelectric devices)
Exposure to HfO₂-based ferroelectric devices / FeFETs are desirable
Proven research capability through Thesis work at leading research institutes and Scientific publications or conference contributions
What We Offer
Direct supervision within the Technology Architect /TD Group at GlobalFoundries Dresden
Access to state-of-the-art semiconductor fabrication and characterization infrastructure
Opportunity to work at the forefront of Ferroelectric memory technologies and AI hardware and in-memory computing
Strong collaboration with internal R&D, device engineering, and external research partners
Opportunity to publish in leading journals and present at top-tier conferences
Integration into one of Europe’s leading semiconductor research ecosystems
Key Details
Start Date: October 1st, 2026; limited contract for 3 years.
Location: GlobalFoundries Dresden, F1.
Degree: PhD (in cooperation with a partner university, e.g. TU Dresden)
Information about our benefits you can find here: https://gf.com/careers/opportunities-in-europe/
